L. Dobos

6701618021

Publications - 3

Contact problems in GaAs-based solar cells

Ákos Nemcsics Antal Ürmös Zoltán Farkas L. Dobos Szilvia Nagy

Publication Name: Acta Polytechnica Hungarica

Publication Date: 2018-01-01

Volume: 15

Issue: 6

Page Range: 99-124

Description:

The present work deals with contact problems of GaAs-based solar cells. In the introduction the most basic GaAs-based solar cell structures are introduced. Then, the energy and electronic properties are investigated. In the third part of this publication, the technological aspects of the metallization are discussed. Here the surface patterns are investigated, that are formed at the surface of the Au/GaAs and Au/TiN/GaAs material systems, as the effect of the annealing process. The further aim of these investigations to investigate, how the properties of ohmic contact depends on the properties of the material system. If these relations are known, the relationships between different morphologies and their electric qualities will be also known.

Open Access: Yes

DOI: 10.12700/APH.15.6.2018.6.6

Heat treatment parameters effecting the fractal dimensions of AuGe metallization on GaAs

Csaba Dominkovics János Pipek L. Dobos Gábor Harsányi I. Mojzes Szilvia Nagy

Publication Name: Applied Physics Letters

Publication Date: 2007-08-24

Volume: 91

Issue: 7

Page Range: Unknown

Description:

Correlation was detected between the thermal treatment parameters of the AuGe-GaAs system and surface fractal structure. Structural entropic calculations were used to confirm the results obtained by fractal calculations. © 2007 American Institute of Physics.

Open Access: Yes

DOI: 10.1063/1.2768911

Analysis of morphology changes of heat treated metallization of compound semiconductors by the fast wavelet-transform based on B-Spline

K. A. Demcu M. Schusztera L. Dobos I. Mojzes Szilvia Nagy

Publication Name: Journal of Optoelectronics and Advanced Materials

Publication Date: 2007-01-01

Volume: 9

Issue: 7

Page Range: 2241-2244

Description:

Heat treatment of metallized compound semiconductors results in generation of Ohmic contacts. The morphology changes of the surface during the thermal treatment can be observed by scanning electron microscope. According to our previous results these patterns show fractal character. The fractal dimension of a self-similar object can be calculated using the toolbox of fast wavelet-transform. A method is presented for analyzing the electron microscopic images of the heat treated samples by a fast wavelet-transform based algorithm using the filter coefficients of the two dimensional B-Spline functions. A connection between the dimension values of the patterns and the temperatures of the heat treating are shown.

Open Access: Yes

DOI: DOI not available